MDF9N60 - MagnaChip

MDF9N60 N-Channel MOSFET

The MDF9N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS = 660V  ID = 9.0A  RDS(ON) ≤ 0.75Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V  Power.

Features

 VDS = 600V  VDS = 660V  ID = 9.0A  RDS(ON) ≤ 0.75Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V  Power Supply  PFC  High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbo.