MDF9N50TH - MagnaChip

MDF9N50TH N-Channel MOSFET

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 9.0 RDS(ON) ≤ 0.85Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting G D S A.

Features

VDS = 500V ID = 9.0 RDS(ON) ≤ 0.85Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting G D S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy (4) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o Rating 500 ±30 9.0 5.5 36 38 0.3 Unit V V A A A W W/ oC V/ns mJ o ID IDM TC=25oC Derate above 25 oC PD Dv/dt EAS TJ, Tstg 4.5 300 -55~150 Junction and Storage Temperature Range ※ Id limited by maximum junction tempe.