MDF9N50F - MagnaChip

MDF9N50F N-Channel MOSFET

The MDF9N50F uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N50F is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 8.0A @VGS = 10V  RDS(ON) ≤ 0.9Ω @VGS = 10V Applications  Power Supply  HID  Lighting G DS Absolute M.

Features

 VDS = 500V
 ID = 8.0A @VGS = 10V
 RDS(ON) ≤ 0.9Ω @VGS = 10V Applications
 Power Supply
 HID
 Lighting G DS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug.