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These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. D Features VDS = 250V ID = 10.2A RDS(ON) ≤ 0.28Ω @ VGS = 10V Applications Power.
VDS = 250V ID = 10.2A RDS(ON) ≤ 0.28Ω @ VGS = 10V Applications Power Supply Motor Control High Current, High Speed Switching D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Avalanche Energy(1) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derivate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) T.
MDD14N25C - INCHANGE
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDD14N25C ·FEATURES ·With To-252(DPAK) package ·Low input capac.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MDD142-08N1 |
IXYS |
Standard Rectifier |
|
| 2 | MDD142-12N1 |
IXYS |
Standard Rectifier |
|
| 3 | MDD142-14N1 |
IXYS |
Standard Rectifier |
|
| 4 | MDD142-16N1 |
IXYS |
Standard Rectifier |
|
| 5 | MDD142-18N1 |
IXYS |
Standard Rectifier |
|
| 6 | MDD1051 |
MagnaChip |
Single N-channel MOSFET |
|
| 7 | MDD1051RH |
INCHANGE |
N-Channel MOSFET |
|
| 8 | MDD1080-18N7 |
IXYS |
Diode Modules |
|
| 9 | MDD1080-24N7 |
IXYS |
Diode Modules |
|
| 10 | MDD1080-28N7 |
IXYS |
Diode Modules |
|
| 11 | MDD10N074RH |
MagnaChip |
N-channel MOSFET |
|
| 12 | MDD1501 |
MagnaChip |
Single N-channel Trench MOSFET |
|