MDD1501 - MagnaChip

MDD1501 Single N-channel Trench MOSFET

The MDD1501 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1501 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 30V  ID = 67.4A @VGS = 10V  RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V  100.

Features

 VDS = 30V  ID = 67.4A @VGS = 10V  RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range G S TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 67.4 53.9 25.1(3) 20.2(3) 270 44.6 28.5 6.2(3) 4.0(3) 94 -55~150 Unit V V A A W mJ oC .