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MDD1051 |
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| Part Number | MDD1051 |
| Manufacturer | MagnaChip |
| Description | The MDD1051 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchr... |
| Features |
VDS = 150V
ID = 28A @VGS = 10V
RDS(ON) (MAX)
< 46.0mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
D
G S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1) Pulsed Drain Current
TC=25oC (Silicon Limited) TC=100oC
Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jul. 2021. Version 1.3
1
G S
Symbol VDSS VGSS ID IDM
... |
| Document |
 MDD1051 Data Sheet
PDF 1.06MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MDD1051RH |
INCHANGE |
N-Channel MOSFET |
|
| 2 | MDD1080-18N7 |
IXYS |
Diode Modules |
|
| 3 | MDD1080-24N7 |
IXYS |
Diode Modules |
|
| 4 | MDD1080-28N7 |
IXYS |
Diode Modules |
|
| 5 | MDD10N074RH |
MagnaChip |
N-channel MOSFET |
|