MBRT40045 thru MBRT400100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC bloc.
• High Surge Capability
• Types up to 100 V VRRM
• Isolation Type Package Three Tower Package
VRRM = 20 V - 100 V IF = 400 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms Conditions MBRT40045 (R) MBRT40060 (R) MBRT40080 (R) MBRT400100 (R) Unit 45 32 45 400 3000 -40 t.
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRT40045 |
GeneSiC |
(MBRT40045 - MBRT400100R) Silicon Power Schottky Diode | |
2 | MBRT40045 |
America Semiconductor |
Silicon Power Schottky Diode | |
3 | MBRT40040 |
GeneSiC |
(MBRT40020 - MBRT40040R) Silicon Power Schottky Diode | |
4 | MBRT40040 |
America Semiconductor |
Silicon Power Schottky Diode | |
5 | MBRT40040L |
GeneSiC |
Silicon Power Schottky Diode | |
6 | MBRT40040R |
GeneSiC |
(MBRT40020 - MBRT40040R) Silicon Power Schottky Diode | |
7 | MBRT40040R |
America Semiconductor |
Silicon Power Schottky Diode | |
8 | MBRT40040RL |
GeneSiC |
Silicon Power Schottky Diode | |
9 | MBRT400100 |
GeneSiC |
(MBRT40045 - MBRT400100R) Silicon Power Schottky Diode | |
10 | MBRT400100 |
America Semiconductor |
Silicon Power Schottky Diode | |
11 | MBRT400100R |
GeneSiC |
(MBRT40045 - MBRT400100R) Silicon Power Schottky Diode | |
12 | MBRT400100R |
America Semiconductor |
Silicon Power Schottky Diode |