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MBRT400100 - GeneSiC

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MBRT400100 (MBRT40045 - MBRT400100R) Silicon Power Schottky Diode

MBRT40045 thru MBRT400100R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC bloc.

Features


• High Surge Capability
• Types up to 100 V VRRM
• Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms Conditions MBRT40045 (R) MBRT40060 (R) MBRT40080 (R) MBRT400100 (R) Unit 45 32 45 400 3000 -40 t.

The same part from a different manufacturer

Datasheet MBRT400100 - America Semiconductor MBRT400100

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

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