MBRT40040RL - GeneSiC

MBRT40040RL Silicon Power Schottky Diode

Low VF Silicon Power Schottky Diode Features • High Surge Capability • Type 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT40040(R)L VRRM = 40 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT40.

Features

• High Surge Capability
• Type 40 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive MBRT40040(R)L VRRM = 40 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT40040(R)L Unit Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Pa.