MBRT40040R - GeneSiC

MBRT40040R (MBRT40020 - MBRT40040R) Silicon Power Schottky Diode

MBRT40020 thru MBRT40040R Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC block.

Features

• High Surge Capability
• Types up to 100 V VRRM
• Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms Conditions MBRT40020 (R) MBRT40030 (R) MBRT40035 (R) MBRT40040 (R) Unit 20 14 20 400 3000 -40 to.