Switch-mode Power Rectifier 60 V, 20 A MBR20L60CTG MBRF20L60CTG Features and Benefits Low Power Loss/High Efficiency High Surge Capacity 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection These Devices are Pb−Free and are RoHS Compliant* Applications Power Supply − Output Rectification Power Management Instrumentation Mechanical.
Low Power Loss/High Efficiency
High Surge Capacity
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
These Devices are Pb−Free and are RoHS Compliant
*
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Shipped 50 Units Per Plastic Tube
*For additional .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRF20L60CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
2 | MBRF20L60CT |
ON Semiconductor |
Power Rectifier | |
3 | MBRF20L100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
4 | MBRF20L120CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
5 | MBRF20L45CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
6 | MBRF20L45CT |
Bruckewell |
Dual Common-Cathode Ultra Low VF Schottky Rectifier | |
7 | MBRF20L45CTG |
ON Semiconductor |
Switch-mode Power Rectifier | |
8 | MBRF200100 |
America Semiconductor |
Silicon Power Schottky Diode | |
9 | MBRF200100 |
GeneSiC |
Silicon Power Schottky Diode | |
10 | MBRF200100R |
America Semiconductor |
Silicon Power Schottky Diode | |
11 | MBRF200100R |
GeneSiC |
Silicon Power Schottky Diode | |
12 | MBRF200150 |
GeneSiC |
Silicon Power Schottky Diode |