Switch-mode Power Rectifier 45 V, 20 A MBR20L45CTG, MBRF20L45CTG Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 150°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection Applications • Power Supply − Output Rectification • Power Management • Instrumentation .
• Low Forward Voltage
• Low Power Loss/High Efficiency
• High Surge Capacity
• 150°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately): 1.9 Grams
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 Units Per Plastic Tube
• These.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRF20L45CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
2 | MBRF20L45CT |
Bruckewell |
Dual Common-Cathode Ultra Low VF Schottky Rectifier | |
3 | MBRF20L100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
4 | MBRF20L120CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
5 | MBRF20L60CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
6 | MBRF20L60CT |
ON Semiconductor |
Power Rectifier | |
7 | MBRF20L60CTG |
ON Semiconductor |
Switch-mode Power Rectifier | |
8 | MBRF200100 |
America Semiconductor |
Silicon Power Schottky Diode | |
9 | MBRF200100 |
GeneSiC |
Silicon Power Schottky Diode | |
10 | MBRF200100R |
America Semiconductor |
Silicon Power Schottky Diode | |
11 | MBRF200100R |
GeneSiC |
Silicon Power Schottky Diode | |
12 | MBRF200150 |
GeneSiC |
Silicon Power Schottky Diode |