G Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE 25 20 15 MBRF20L120CT MBRF20L100CT 10 5 0 0 RESISTER OR INDUCTIVE LOAD WITH HEATSINK 25 50 75 100 125 CASE TEMPERATURE (℃) 150 175 FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER.
- UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case:ITO-220AB ITO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal:Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRF20L120CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
2 | MBRF20L45CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
3 | MBRF20L45CT |
Bruckewell |
Dual Common-Cathode Ultra Low VF Schottky Rectifier | |
4 | MBRF20L45CTG |
ON Semiconductor |
Switch-mode Power Rectifier | |
5 | MBRF20L60CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
6 | MBRF20L60CT |
ON Semiconductor |
Power Rectifier | |
7 | MBRF20L60CTG |
ON Semiconductor |
Switch-mode Power Rectifier | |
8 | MBRF200100 |
America Semiconductor |
Silicon Power Schottky Diode | |
9 | MBRF200100 |
GeneSiC |
Silicon Power Schottky Diode | |
10 | MBRF200100R |
America Semiconductor |
Silicon Power Schottky Diode | |
11 | MBRF200100R |
GeneSiC |
Silicon Power Schottky Diode | |
12 | MBRF200150 |
GeneSiC |
Silicon Power Schottky Diode |