Schottky Barrier Rectifier INCHANGE Semiconductor MBRF20L45CT FEATURES ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency rectifier .
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current
45 V 20 A
Nonrepe.
Rectifiers 20 Amp 45V Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forwa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBRF20L45CTG |
ON Semiconductor |
Switch-mode Power Rectifier | |
2 | MBRF20L100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
3 | MBRF20L120CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier | |
4 | MBRF20L60CT |
Inchange Semiconductor |
Schottky Barrier Rectifier | |
5 | MBRF20L60CT |
ON Semiconductor |
Power Rectifier | |
6 | MBRF20L60CTG |
ON Semiconductor |
Switch-mode Power Rectifier | |
7 | MBRF200100 |
America Semiconductor |
Silicon Power Schottky Diode | |
8 | MBRF200100 |
GeneSiC |
Silicon Power Schottky Diode | |
9 | MBRF200100R |
America Semiconductor |
Silicon Power Schottky Diode | |
10 | MBRF200100R |
GeneSiC |
Silicon Power Schottky Diode | |
11 | MBRF200150 |
GeneSiC |
Silicon Power Schottky Diode | |
12 | MBRF200150R |
GeneSiC |
Silicon Power Schottky Diode |