Switching Diodes MA2C196 Silicon epitaxial planar type Unit : mm For switching circuits I Features • Low forward dynamic resistance rf • Small terminal capacitance, Ct COLORED BAND INDICATES CATHODE φ 0.45 max. 1 I Absolute Maximum Ratings Ta = 25°C Parameter Forward voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak for.
• Low forward dynamic resistance rf
• Small terminal capacitance, Ct
COLORED BAND INDICATES CATHODE
φ 0.45 max. 1
I Absolute Maximum Ratings Ta = 25°C
Parameter Forward voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Note)
* : t = l s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 50 50 100 225 500 200 −55 to +200 Unit V V mA mA mA °C °C
0.2 max.
2 φ 1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter Reverse c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2C195 |
Panasonic |
Silicon epitaxial planar type | |
2 | MA2C165 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA2C166 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
4 | MA2C167 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
5 | MA2C178 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
6 | MA2C179 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA2C185 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA2C188 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
9 | MA2C029 |
Panasonic |
Silicon epitaxial planar type variable resistor | |
10 | MA2C346 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2C700 |
Panasonic |
Schottky Barrier Diodes (SBD) | |
12 | MA2C700A |
Panasonic |
Schottky Barrier Diodes (SBD) |