M58LT128HST - STMicroelectronics

M58LT128HST (M58LT128HSB / M58LT128HST) Flash memories

. . . . 7 Signal descriptions . . . . . 12 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 Address inputs (A0-A22) . . . . . . . . .

Features

■ Supply voltage
  – VDD = 1.7 V to 2.0 V for program, erase and read
  – VDDQ = 2.7 V to 3.6 V for I/O buffers
  – VPP = 9 V for fast program Synchronous / Asynchronous Read
  – Synchronous Burst Read mode: 52 MHz
  – Asynchronous Page Read mode
  – Random Access: 85 ns Synchronous Burst Read Suspend Programming time
  – 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization
  – Multiple Bank memory array: 8-Mbit Banks
  – Parameter Blocks (top or bottom location) Dual operations
  – program/erase in one Bank while read in others
  – No delay between read and write oper.