. . . . 8 Signal descriptions . . . . . 12 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 Address inputs (A0-A22) . . . . . ..
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Supply voltage
– VDD = 1.7 V to 2.0 V for program, erase and read
– VDDQ = 1.7 V to 2.0 V for I/O Buffers
– VPP = 9 V for fast program Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 54 MHz
– Asynchronous Page Read mode
– Random access: 85 ns Synchronous Burst Read Suspend Programming time
– 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization
– Multiple Bank memory array: 8 Mbit banks
– Parameter Blocks (top or bottom location) Dual operations
– program/erase in one Bank while read in others
– No delay between read and write oper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58LR128HB |
ST Microelectronics |
(M58LR128Hx) Flash memories | |
2 | M58LR128FB |
ST Microelectronics |
Flash Memory | |
3 | M58LR128FT |
ST Microelectronics |
Flash Memory | |
4 | M58LR128GB |
STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory | |
5 | M58LR128GL |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories | |
6 | M58LR128GT |
STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory | |
7 | M58LR128GU |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories | |
8 | M58LR128KB |
Numonyx |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories | |
9 | M58LR128KT |
Numonyx |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories | |
10 | M58LR256GL |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories | |
11 | M58LR256GU |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories | |
12 | M58LR256KB |
Numonyx |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories |