. . . . 7 Signal descriptions . . . . . 12 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 Address inputs (A0-A22) . . . . . . . . .
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Supply voltage
– VDD = 1.7 V to 2.0 V for program, erase and read
– VDDQ = 2.7 V to 3.6 V for I/O buffers
– VPP = 9 V for fast program Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 52 MHz
– Asynchronous Page Read mode
– Random Access: 85 ns Synchronous Burst Read Suspend Programming time
– 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization
– Multiple Bank memory array: 8-Mbit Banks
– Parameter Blocks (top or bottom location) Dual operations
– program/erase in one Bank while read in others
– No delay between read and write oper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58LT128HST |
STMicroelectronics |
(M58LT128HSB / M58LT128HST) Flash memories | |
2 | M58LT128GSB |
STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories | |
3 | M58LT128GST |
STMicroelectronics |
(M58LT128GSB / M58LT128GST) Flash Memories | |
4 | M58LT256JSB |
STMicroelectronics |
(M58LT256JSB / M58LT256JST) Flash memories | |
5 | M58LR128FB |
ST Microelectronics |
Flash Memory | |
6 | M58LR128FT |
ST Microelectronics |
Flash Memory | |
7 | M58LR128GB |
STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory | |
8 | M58LR128GL |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories | |
9 | M58LR128GT |
STMicroelectronics |
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory | |
10 | M58LR128GU |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories | |
11 | M58LR128HB |
ST Microelectronics |
(M58LR128Hx) Flash memories | |
12 | M58LR128HT |
ST Microelectronics |
(M58LR128Hx) Flash memories |