M58LR128GB - STMicroelectronics

M58LR128GB 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory

. . . . . 7 Figure 2. Table 1. Figure 3. Table 2. Figure 4. Logic Diagram . . . . . Signal Names . . . . . V.

Features

SUMMARY
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■ SUPPLY VOLTAGE
  – VDD = 1.7V to 2.0V for program, erase and read
  – VDDQ = 1.7V to 2.0V for I/O Buffers
  – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ
  – Synchronous Burst Read mode: 54MHz
  – Asynchronous Page Read mode
  – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME
  – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION
  – Multiple Bank Memory Array: 8 Mbit Banks
  – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
  – program/erase in one Bank while read in others.