M58LR128KT - Numonyx

M58LR128KT (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

. . . . 8 Signal descriptions . . . . . 13 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 Address inputs (A0-Amax) . . . . . .

Features

■ Supply voltage
  – VDD = 1.7 V to 2.0 V for program, erase and read
  – VDDQ = 1.7 V to 2.0 V for I/O buffers
  – VPP = 9 V for fast program Synchronous/asynchronous read
  – Synchronous burst read mode: 54 MHz, 66 MHz
  – Asynchronous page read mode
  – Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time
  – 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization
  – Multiple bank memory array: 8 Mbit banks for the M58LR128KT/B 16 Mbit banks for the M58LR256KT/B
  – Parameter blocks (top or bottom location) Dual operations
  – Program/erase in.