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M58BW16F - Micron

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M58BW16F 16Mb 3.3V Supply Flash Memory

M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory Features • Supply voltage – VDD = 2.7–3.6V (45ns) or VDD = 2.5–3.3V (55ns) – VDDQ = VDDQIN = 2.4V to VDD for I/O buffers • High performance – Access times: 45ns and 55ns – Synchronous burst reads – 75 MHz effective zero wait-state burst read – Async.

Features

M58BW16F, M58BW32F 16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory Features
• Supply voltage
  – VDD = 2.7
  –3.6V (45ns) or VDD = 2.5
  –3.3V (55ns)
  – VDDQ = VDDQIN = 2.4V to VDD for I/O buffers
• High performance
  – Access times: 45ns and 55ns
  – Synchronous burst reads
  – 75 MHz effective zero wait-state burst read
  – Asynchronous page reads (4 double words)
• M58BW32F memory organization:
  – Eight 64 Kbit small parameter blocks
  – Four 128 Kbit large parameter blocks
  – Sixty-two 512 Kbit main blocks
• M58BW16F memory organization:
  – Eight 64 Kbit parameter blocks
  – Thirty-one 512 Kbit ma.

The same part from a different manufacturer

Datasheet M58BW16F - ST Microelectronics M58BW16F

. . . . 7 1.1 Block Protection.

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