M58BW032BB - STMicroelectronics

M58BW032BB 32 Mbit 3.3V Supply Flash Memory

. . . . . 6 Figure 2. Logic Diagram . . . . 7 Table 1. Signal Names . . .

Features

SUMMARY
■
■
■ SUPPLY VOLTAGE
  – VDD = 3.0V to 3.6V for Program, Erase and Read
  – VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE
  – Access Time: 45, 55 and 60ns
  – 75MHz Effective Zero Wait-State Burst Read
  – Synchronous Burst Reads
  – Asynchronous Page Reads MEMORY ORGANIZATION
  – Eight 64 Kbit small parameter Blocks
  – Four 128Kbit large parameter Blocks (of which one is OTP)
  – Sixty-two 512Kbit main Blocks Figure 1. Packages PQFP80 (T) BGA
■
■
■
■
■
■ HARDWARE BLOCK PROTECTION
  – WP pin Lock Program and Erase
  – VPEN signal for Program/Erase Enable SOFTWARE BLOCK PROTECTI.