M58BW016FB - Numonyx

M58BW016FB 16 Mbit 3V supply Flash memories

M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional) High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state bur.

Features

Supply voltage
  – VDD = 2.7 V to 3.6 V for program, erase and read
  – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers
  – VPP = 12 V for fast program (optional) High performance
  – Access times: 70, 80 ns
  – 56 MHz effective zero wait-state burst read
  – Synchronous burst read
  – Asynchronous page read Hardware block protection
  – WP pin for write protect of the 2 outermost parameter blocks and all main blocks
  – RP pin for write protect of all blocks Optimized for FDI drivers
  – Fast program / erase suspend latency time < 6 µs
  – Common Flash interface Memory blocks
  – 8 parameters blocks (top or bottom)
  –.