. . . . . 6 Figure 2. Logic Diagram . . . . 7 Table 1. Signal Names . . .
SUMMARY
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SUPPLY VOLTAGE
– VDD = 3.0V to 3.6V for Program, Erase and Read
– VDDQ = VDDQIN = 1.6V to 3.6V for I/O Buffers HIGH PERFORMANCE
– Access Time: 45, 55 and 60ns
– 75MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads MEMORY ORGANIZATION
– Eight 64 Kbit small parameter Blocks
– Four 128Kbit large parameter Blocks (of which one is OTP)
– Sixty-two 512Kbit main Blocks
Figure 1. Packages
PQFP80 (T)
BGA
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HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
– VPEN signal for Program/Erase Enable SOFTWARE BLOCK PROTECTI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58BW032BB |
STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory | |
2 | M58BW032DB |
STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory | |
3 | M58BW032DT |
STMicroelectronics |
32 Mbit 3.3V Supply Flash Memory | |
4 | M58BW016BB |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories | |
5 | M58BW016BT |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories | |
6 | M58BW016DB |
Numonyx |
16 Mbit 3V supply Flash memories | |
7 | M58BW016DB |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories | |
8 | M58BW016DT |
Numonyx |
16 Mbit 3V supply Flash memories | |
9 | M58BW016DT |
ST Microelectronics |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories | |
10 | M58BW016FB |
Numonyx |
16 Mbit 3V supply Flash memories | |
11 | M58BW016FT |
Numonyx |
16 Mbit 3V supply Flash memories | |
12 | M58BW16F |
Micron |
16Mb 3.3V Supply Flash Memory |