M29DW640D - ST Microelectronics

M29DW640D 64 Mbit (8Mb x8 or 4Mb x16 / Multiple Bank / Page / Boot Block) 3V Supply Flash Memory

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Features

SUMMARY
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■ SUPPLY VOLTAGE
  – VCC = 2.7V to 3.6V for Program, Erase and Read
  – VPP =12V for Fast Program (optional) ASYNCHRONOUS PAGE READ MODE
  – Page Width 4 Words
  – Page Access 25, 30ns
  – Random Access 70, 90ns PROGRAMMING TIME
  – 10µs per Byte/Word typical
  – 4 Words / 8 Bytes at-a-time Program MEMORY BLOCKS
  – Quadruple Bank Memory Array: 8Mbit+24Mbit+24Mbit+8Mbit
  – Parameter Blocks (at both Top and Bottom) DUAL OPERATIONS
  – While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks PROGRAM/ ERASE SUSPEND and RESUME MODES
  – Read from any Block during Program .