M29DW324DT M29DW324DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program s MEMORY BLOCK.
SUMMARY s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and Read
– VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program s MEMORY BLOCKS
– Dual Bank Memory Array: 16+16 Mbit
– Parameter Blocks (Top or Bottom Location) s DUAL OPERATIONS
– Read in one bank while Program or Erase in
other s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
s TEMP.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M29DW324DT |
STMicroelectronics |
32 Mbit 3V Supply Flash Memory | |
2 | M29DW323DB |
STMicroelectronics |
32 Mbit 3V Supply Flash Memory | |
3 | M29DW323DB |
Numonyx |
32 Mbit 3V Supply Flash Memory | |
4 | M29DW323DT |
STMicroelectronics |
32 Mbit 3V Supply Flash Memory | |
5 | M29DW323DT |
Numonyx |
32 Mbit 3V Supply Flash Memory | |
6 | M29DW127G |
Numonyx |
128-Mbit 3V supply flash memory | |
7 | M29DW128F |
ST Microelectronics |
Flash memory | |
8 | M29DW128F |
Numonyx |
Flash memory | |
9 | M29DW128G |
Numonyx |
Flash memory | |
10 | M29DW256G |
Micron |
Parallel NOR Flash Embedded Memory | |
11 | M29DW640D |
ST Microelectronics |
64 Mbit (8Mb x8 or 4Mb x16 / Multiple Bank / Page / Boot Block) 3V Supply Flash Memory | |
12 | M29DW640F |
STMicroelectronics |
64 Mbit 3V Supply Flash Memory |