M29DW256G - Micron

M29DW256G Parallel NOR Flash Embedded Memory

256Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 9V for fast program (optional) • Asynchronous random/page read – Page size: 8 words – Page acc.

Features

Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features
• Supply voltage
  – VCC = 2.7
  –3.6V (program, erase, read)
  – VCCQ = 1.65
  –3.6V (I/O buffers)
  – VPPH = 9V for fast program (optional)
• Asynchronous random/page read
  – Page size: 8 words
  – Page access: 25ns, 30ns
  – Random access: 70ns, 80ns
• Fast program commands: 32-word
• Enhanced buffered program commands: 256-word
• Program time
  – 16µs per byte/word TYP
  – Chip program time: 10 s with VPPH and 16s with- out VPPH
• Memory organization
  – Quadruple bank memory array: 32Mb + 96Mb.