M29DW323DT - STMicroelectronics

M29DW323DT 32 Mbit 3V Supply Flash Memory

M29DW323DT M29DW323DB 32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program s MEMORY .

Features

SUMMARY s SUPPLY VOLTAGE
  – VCC = 2.7V to 3.6V for Program, Erase and Read
  – VPP =12V for Fast Program (optional) s ACCESS TIME: 70, 90ns s PROGRAMMING TIME
  – 10µs per Byte/Word typical
  – Double Word/ Quadruple Byte Program s MEMORY BLOCKS
  – Dual Bank Memory Array: 8Mbit+24Mbit
  – Parameter Blocks (Top or Bottom Location) s DUAL OPERATIONS
  – Read in one bank while Program or Erase in other s ERASE SUSPEND and RESUME MODES
  – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND
  – Faster Production/Batch Programming s VPP/WP PIN for FAST PROGRAM and WRITE PROTECT s TE.