M24L416256SA - Elite Semiconductor Memory Technology

M24L416256SA 4-Mbit (256K x 16) Pseudo Static RAM

of read and write modes. Functional Description The M24L416256SA is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for portable applications such as cellular telephones. The device can .

Features

• Wide voltage range: 2.7V
  –3.6V
• Access time: 55 ns, 60 ns and 70 ns
• Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed)
• Ultra low standby power
• Automatic power-down when deselected
• CMOS for optimum speed/power www.DataSheet4U.com M24L416256SA 4-Mbit (256K x 16) Pseudo Static RAM The input/output pins (I/O0through I/O15) are placed in a high-impedance state when : deselected ( CE HIGH), outputs are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write oper.