M24L416256DA - Elite Semiconductor Memory Technology

M24L416256DA 4-Mbit (256K x 16) Pseudo Static RAM

of read and write modes. Functional Description The M24L416256DA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for portable applications such as cellular telephones. The dev.

Features

• Advanced low-power architecture
•High speed: 55 ns, 60 ns and 70 ns
•Wide voltage range: 2.7V to 3.6V
•Typical active current: 1 mA @ f = 1 MHz
•Low standby power
•Automatic power-down when deselected www.DataSheet4U.com M24L416256DA 4-Mbit (256K x 16) Pseudo Static RAM reducing power consumption dramatically when deselected ( CE1 HIGH, CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected ( CE1 HIGH, CE2 LOW, OE is HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW). Reading from the d.