M24L16161ZA - Elite Semiconductor Memory Technology

M24L16161ZA 16-Mbit (1M x 16) Pseudo Static RAM

of read and write modes. To enable Deep Sleep Mode, drive ZZ LOW. See the Truth Table for a complete description of Read, Write, and Deep Sleep mode. Functional Description[1] The M24L16161ZA is a high-performance CMOS Pseudo Static RAM organized as 1M words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit des.

Features

‧Wide voltage range: 2.2V
  –3.6V
• Access Time: 70 ns
• Ultra-low active power— Typical active current: 3 mA @ f = 1 MHz— Typical active current: 18 mA @ f = fmax
• Ultra low standby power
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Deep Sleep Mode
• Offered in a Lead-Free 48-ball BGA package
• Operating Temperature:
  –40°C to +85°C www.DataSheet4U.com M24L16161ZA 16-Mbit (1M x 16) Pseudo Static RAM are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW). To write to the devic.