M24L28256SA - Elite Semiconductor Memory Technology

M24L28256SA 2-Mbit (256K x 8) Pseudo Static RAM

of read and write modes. Functional Description The M24L28256SA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 256K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable( CE ) and active LOW Output Enable ( OE ).This device has an automatic power-down feature that reduces power consumption dramatically when desel.

Features

•Advanced low-power architecture
•High speed: 55 ns, 70 ns
•Wide voltage range: 2.7V to 3.6V
•Typical active current: 1 mA @ f = 1 MHz
•Low standby power
•Automatic power-down when deselected www.DataSheet4U.com M24L28256SA 2-Mbit (256K x 8) Pseudo Static RAM the device is accomplished by asserting Chip Enable ( CE ) and Write Enable ( WE ) inputs LOW .Data on the eight I/O pins(I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17). Reading from the device is accomplished by asserting the Chip Enable One ( CE ) and Output Enable ( OE ) inputs LOW.