AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial struc.
♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz
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DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LPD200 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT | |
2 | LPD200MX |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT | |
3 | LPD200P70 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT | |
4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink | |
5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink | |
6 | LPD25-15B |
ALPHA |
Low Pressure Drop Heat Sink | |
7 | LPD25-20B |
ALPHA |
Low Pressure Drop Heat Sink | |
8 | LPD25-25B |
ALPHA |
Low Pressure Drop Heat Sink | |
9 | LPD25-3B |
ALPHA |
Low Pressure Drop Heat Sink | |
10 | LPD25-4B |
ALPHA |
Low Pressure Drop Heat Sink | |
11 | LPD25-5B |
ALPHA |
Low Pressure Drop Heat Sink | |
12 | LPD25-6B |
ALPHA |
Low Pressure Drop Heat Sink |