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AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure a.
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency
LPD200
GATE BOND PAD (2X)
DRAIN BOND PAD (2X)
SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)
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DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LPD200MX |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 2 | LPD200P70 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 3 | LPD200SOT343 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 6 | LPD25-15B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 7 | LPD25-20B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 8 | LPD25-25B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 9 | LPD25-3B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 10 | LPD25-4B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 11 | LPD25-5B |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 12 | LPD25-6B |
ALPHA |
Low Pressure Drop Heat Sink |
|