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LPD200SOT343 |
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| Part Number | LPD200SOT343 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.... |
| Features |
♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz
• DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The ... |
| Document |
 LPD200SOT343 Data Sheet
PDF 68.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LPD200 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 2 | LPD200MX |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 3 | LPD200P70 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink |
|