AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The e.
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz
LPD200P70
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DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LPD200 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT | |
2 | LPD200MX |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT | |
3 | LPD200SOT343 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT | |
4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink | |
5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink | |
6 | LPD25-15B |
ALPHA |
Low Pressure Drop Heat Sink | |
7 | LPD25-20B |
ALPHA |
Low Pressure Drop Heat Sink | |
8 | LPD25-25B |
ALPHA |
Low Pressure Drop Heat Sink | |
9 | LPD25-3B |
ALPHA |
Low Pressure Drop Heat Sink | |
10 | LPD25-4B |
ALPHA |
Low Pressure Drop Heat Sink | |
11 | LPD25-5B |
ALPHA |
Low Pressure Drop Heat Sink | |
12 | LPD25-6B |
ALPHA |
Low Pressure Drop Heat Sink |