Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
LPD200 |
Click to view a larger image
| Part Number | LPD200 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0... |
| Features |
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency
LPD200
GATE BOND PAD (2X)
DRAIN BOND PAD (2X)
SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)
• DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroo... |
| Document |
 LPD200 Data Sheet
PDF 30.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LPD200MX |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 2 | LPD200P70 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 3 | LPD200SOT343 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT |
|
| 4 | LPD25 |
ALPHA |
Low Pressure Drop Heat Sink |
|
| 5 | LPD25-10B |
ALPHA |
Low Pressure Drop Heat Sink |
|