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LH532100B-1 |
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| Part Number | LH532100B-1 |
| Manufacturer | Sharp Electrionic Components |
| Description | The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate process technology. D7 CE A10 OE/OE A11 A9 A8 A13 A14 21 22 23 24 25 26 27 28 ... |
| Features |
• 262,144 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Mask-programmable control pin: Pin 1 = OE1/OE1/DC Pin 24 = OE/OE • Packages: 32-pin, 600-mil DIP 32-pin, 525-mil SOP 32-pin, 450-mil QFJ (PLCC) 32-pin, 8 × 20 mm2 TSOP (Type I) 32-pin, 400-mil TSOP (Type II) DESCRIPTION The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate process technology. D7 CE A10 OE... |
| Document |
 LH532100B-1 Data Sheet
PDF 79.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 2 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 3 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 4 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 5 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|