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The LH5324500 is a 24M-bit mask-programmable ROM organized as 3,145,728 × 8 bits (Byte mode) or 1,572,864 × 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology. CMOS 24M (3M × 8/1.5M × 16) MROM PIN CONNECTIONS 44-PIN SOP NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE D0 D8 D1 D9 D2 D10 D3 D.
• 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode)
• Access time: 150 ns (MAX.)
• Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.)
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Package: 44-pin, 600-mil SOP DESCRIPTION
The LH5324500 is a 24M-bit mask-programmable ROM organized as 3,145,728 × 8 bits (Byte mode) or 1,572,864 × 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
CMOS 24M (3M × 8/1.5M × 16) MROM
PI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|
| 2 | LH5324C00 |
Sharp Electrionic Components |
CMOS 24M (1.5M x 16) MROM |
|
| 3 | LH5324P00A |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM |
|
| 4 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 5 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 6 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 7 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 8 | LH532100B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 9 | LH53259 |
Sharp Electrionic Components |
CMOS 256K (32K x 8) MROM |
|
| 10 | LH532600 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 11 | LH530800A |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 12 | LH530800A-Y |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|