LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. LBC856AWT1G,.
We declare that the material of product compliance with RoHS requirements.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G
3
MAXIMUM RATINGS
Rating Collector
–Emitter Voltage Collector
–Base Voltage Emitter
–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit V V V mAdc
1 2
SOT
– 323 / SC-70
IC
3 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR
– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LBC856BWT1 |
Leshan Radio Company |
(LBC85xxWT1) General Purpose Transistors PNP Silicon | |
2 | LBC856BDW1T1G |
Leshan Radio Company |
Dual General Purpose Transistors | |
3 | LBC856BLT1G |
Leshan Radio Company |
General Purpose Transistors | |
4 | LBC856BLT3G |
Leshan Radio Company |
General Purpose Transistors | |
5 | LBC856ADW1T1G |
Leshan Radio Company |
Dual General Purpose Transistors | |
6 | LBC856ALT3G |
Leshan Radio Company |
General Purpose Transistors | |
7 | LBC856AWT1 |
Leshan Radio Company |
(LBC85xxWT1) General Purpose Transistors PNP Silicon | |
8 | LBC856AWT1G |
Leshan Radio Company |
(LBC85xxWT1G) General Purpose Transistors PNP Silicon | |
9 | LBC850BLT1G |
Leshan Radio Company |
General Purpose Transistors | |
10 | LBC850BLT3G |
Leshan Radio Company |
General Purpose Transistors | |
11 | LBC850BWT1G |
Leshan Radio Company |
General Purpose Transistors | |
12 | LBC850BWT3G |
Leshan Radio Company |
General Purpose Transistors |