LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. • Device Marking: (S-)LBC856ADW1T1G= 3A (S-)LBC856.
to +150
Unit mW
mW/°C °C/W
°C
ORDERING INFORMATION
Device LBC85
*BDW1T1G LBC85
*BDW1T3G
Shipping 3000/Tape & Reel 10000/Tape & Reel
LBC85
*
* DW1T1G S-LBC85
*
* DW1T1G
65 4
1 2 3
SOT-363
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
DEVICE MARKING See Table
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LBC856BLT1G |
Leshan Radio Company |
General Purpose Transistors | |
2 | LBC856BLT3G |
Leshan Radio Company |
General Purpose Transistors | |
3 | LBC856BWT1 |
Leshan Radio Company |
(LBC85xxWT1) General Purpose Transistors PNP Silicon | |
4 | LBC856BWT1G |
Leshan Radio Company |
(LBC85xxWT1G) General Purpose Transistors PNP Silicon | |
5 | LBC856ADW1T1G |
Leshan Radio Company |
Dual General Purpose Transistors | |
6 | LBC856ALT3G |
Leshan Radio Company |
General Purpose Transistors | |
7 | LBC856AWT1 |
Leshan Radio Company |
(LBC85xxWT1) General Purpose Transistors PNP Silicon | |
8 | LBC856AWT1G |
Leshan Radio Company |
(LBC85xxWT1G) General Purpose Transistors PNP Silicon | |
9 | LBC850BLT1G |
Leshan Radio Company |
General Purpose Transistors | |
10 | LBC850BLT3G |
Leshan Radio Company |
General Purpose Transistors | |
11 | LBC850BWT1G |
Leshan Radio Company |
General Purpose Transistors | |
12 | LBC850BWT3G |
Leshan Radio Company |
General Purpose Transistors |