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LBC856BDW1T1G - Leshan Radio Company

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LBC856BDW1T1G Dual General Purpose Transistors

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. • Device Marking: (S-)LBC856ADW1T1G= 3A (S-)LBC856.

Features

to +150 Unit mW mW/°C °C/W °C ORDERING INFORMATION Device LBC85
*BDW1T1G LBC85
*BDW1T3G Shipping 3000/Tape & Reel 10000/Tape & Reel LBC85
*
* DW1T1G S-LBC85
*
* DW1T1G 65 4 1 2 3 SOT-363 (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING See Table Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, LBC858BDW1T1G, L BC858CDW1T1G S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G, S-LBC858BDW1T1G, S-L BC858CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector
  –Emitter Breakdown Vol.

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