LBC856BWT1G |
Part Number | LBC856BWT1G |
Manufacturer | Leshan Radio Company |
Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–7... |
Features |
We declare that the material of product compliance with RoHS requirements.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G
3
MAXIMUM RATINGS
Rating Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc 1 2 SOT – 323 / SC-70 IC 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR – 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R ... |
Document |
LBC856BWT1G Data Sheet
PDF 371.64KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LBC856BWT1 |
Leshan Radio Company |
(LBC85xxWT1) General Purpose Transistors PNP Silicon | |
2 | LBC856BDW1T1G |
Leshan Radio Company |
Dual General Purpose Transistors | |
3 | LBC856BLT1G |
Leshan Radio Company |
General Purpose Transistors | |
4 | LBC856BLT3G |
Leshan Radio Company |
General Purpose Transistors | |
5 | LBC856ADW1T1G |
Leshan Radio Company |
Dual General Purpose Transistors |