LBC856AWT1G - Leshan Radio Company

LBC856AWT1G (LBC85xxWT1G) General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. LBC856AWT1G,.

Features

We declare that the material of product compliance with RoHS requirements. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G 3 MAXIMUM RATINGS Rating Collector
  –Emitter Voltage Collector
  –Base Voltage Emitter
  –Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856
  –65
  –80
  –5.0
  –100 BC857
  –45
  –50
  –5.0
  –100 BC858
  –30
  –30
  –5.0
  –100 Unit V V V mAdc 1 2 SOT
  – 323 / SC-70 IC 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR
  – 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R .