LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com NPN Silicon FEATURE ƽCollector current capability IC = 500 mA. ƽCollector-emitter voltage VCEO(max) = 45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽPb-Free Package is available. LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 3 1 2 DEVICE MARKING AND.
Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 556 300 2.4 417
–55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit
R θJA PD
R θJA T J , T stg
LBC817_S-1/3
LESHAN RADIO COMPANY, LTD.
LBC817 Series
www.datasheet4u.com
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (I C=
–10 mA) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LBC817-25LT1G |
Leshan Radio Company |
General Purpose Transistors | |
2 | LBC817-25LT3G |
Leshan Radio Company |
General Purpose Transistors | |
3 | LBC817-25WT1G |
Leshan Radio Company |
General Purpose Transistors | |
4 | LBC817-25WT3G |
Leshan Radio Company |
General Purpose Transistors | |
5 | LBC817-16LT1 |
Leshan Radio Company |
(LBC817-xxLT1) General Purpose Transistors NPN Silicon | |
6 | LBC817-16LT1G |
Leshan Radio Company |
General Purpose Transistors | |
7 | LBC817-16LT3G |
Leshan Radio Company |
General Purpose Transistors | |
8 | LBC817-16WT1G |
Leshan Radio Company |
General Purpose Transistors | |
9 | LBC817-16WT3G |
Leshan Radio Company |
General Purpose Transistors | |
10 | LBC817-40LT1 |
Leshan Radio Company |
(LBC817-xxLT1) General Purpose Transistors NPN Silicon | |
11 | LBC817-40LT1G |
Leshan Radio Company |
General Purpose Transistors | |
12 | LBC817-40LT3G |
Leshan Radio Company |
General Purpose Transistors |