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LBC817-25LT1 - Leshan Radio Company

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LBC817-25LT1 (LBC817-xxLT1) General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com NPN Silicon FEATURE ƽCollector current capability IC = 500 mA. ƽCollector-emitter voltage VCEO(max) = 45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽPb-Free Package is available. LBC817-16LT1 LBC817-25LT1 LBC817-40LT1 3 1 2 DEVICE MARKING AND.

Features

Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 556 300 2.4 417
  –55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit R θJA PD R θJA T J , T stg LBC817_S-1/3 LESHAN RADIO COMPANY, LTD. LBC817 Series www.datasheet4u.com ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (I C=
  –10 mA) .

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