LESHAN RADIO COMPANY, LTD. General Purpose Transistors • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC817-16WT1G S-LBC817-16 W T1G MAXIMUM RATINGS Rating Symbol Collector–Emitter .
unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 10 mA) Collector
–Emitter Breakdown Voltage (VEB = 0, IC = 10 µA) Emitter
–Base Breakdown Voltage (I E = 1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO V (BR)CES V (BR)EBO
I CBO
45 50 5.0
— —
Typ
— — —
— —
3
1 2
SC-70
1 BASE
3 COLLECTOR
2 EMITTER
Max Unit
—V —V —V
100 nA 5.0 µA
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBC817-16WT1G S-LBC817-16WT1G
ELECTRICAL C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LBC817-16WT3G |
Leshan Radio Company |
General Purpose Transistors | |
2 | LBC817-16LT1 |
Leshan Radio Company |
(LBC817-xxLT1) General Purpose Transistors NPN Silicon | |
3 | LBC817-16LT1G |
Leshan Radio Company |
General Purpose Transistors | |
4 | LBC817-16LT3G |
Leshan Radio Company |
General Purpose Transistors | |
5 | LBC817-25LT1 |
Leshan Radio Company |
(LBC817-xxLT1) General Purpose Transistors NPN Silicon | |
6 | LBC817-25LT1G |
Leshan Radio Company |
General Purpose Transistors | |
7 | LBC817-25LT3G |
Leshan Radio Company |
General Purpose Transistors | |
8 | LBC817-25WT1G |
Leshan Radio Company |
General Purpose Transistors | |
9 | LBC817-25WT3G |
Leshan Radio Company |
General Purpose Transistors | |
10 | LBC817-40LT1 |
Leshan Radio Company |
(LBC817-xxLT1) General Purpose Transistors NPN Silicon | |
11 | LBC817-40LT1G |
Leshan Radio Company |
General Purpose Transistors | |
12 | LBC817-40LT3G |
Leshan Radio Company |
General Purpose Transistors |