LBC817-40LT1G - Leshan Radio Company

LBC817-40LT1G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Continuous I C Value 45 50 .

Features

r
  –Emitter Breakdown Voltage (IC =
  –10 mA) Collector
  –Emitter Breakdown Voltage (VEB = 0, IC =
  –10 µA) Emitter
  –Base Breakdown Voltage (I E =
  –1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.0 — — Typ — — — — — 3 1 2 SOT
  –23 1 BASE 3 COLLECTOR 2 EMITTER Max Unit —V —V —V 100 nA 5.0 µA 1/3 LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Character.