LBC817-25LT1 |
Part Number | LBC817-25LT1 |
Manufacturer | Leshan Radio Company |
Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com NPN Silicon FEATURE ƽCollector current capability IC = 500 mA. ƽCollector-emitter voltage VCEO(max) = 45 V. ƽGeneral purpos... |
Features |
Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 556 300 2.4 417 –55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit R θJA PD R θJA T J , T stg LBC817_S-1/3 LESHAN RADIO COMPANY, LTD. LBC817 Series www.datasheet4u.com ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (I C= –10 mA) ... |
Document |
LBC817-25LT1 Data Sheet
PDF 88.97KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | LBC817-25LT1G |
Leshan Radio Company |
General Purpose Transistors | |
2 | LBC817-25LT3G |
Leshan Radio Company |
General Purpose Transistors | |
3 | LBC817-25WT1G |
Leshan Radio Company |
General Purpose Transistors | |
4 | LBC817-25WT3G |
Leshan Radio Company |
General Purpose Transistors | |
5 | LBC817-16LT1 |
Leshan Radio Company |
(LBC817-xxLT1) General Purpose Transistors NPN Silicon |