LBC807-40LT1G - Leshan Radio Company

LBC807-40LT1G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Ap.

Features

alue
  –45
  –50
  –5.0
  –500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR
  – 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 2.4 417
  –55 to +150 mW mW/°C °C/W °C 3 1 2 SOT
  –23 1 BASE 3 COLLECTOR 2 EMITTER Rev.O 1/10 LE.