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LBC807-40LT1G |
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| Part Number | LBC807-40LT1G |
| Manufacturer | Leshan Radio Company |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amp... |
| Features |
alue –45 –50 –5.0 –500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR – 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 2.4 417 –55 to +150 mW mW/°C °C/W °C 3 1 2 SOT –23 1 BASE 3 COLLECTOR 2 EMITTER Rev.O 1/10 LE... |
| Document |
 LBC807-40LT1G Data Sheet
PDF 174.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LBC807-40LT1 |
Leshan Radio Company |
(LBC807-xxLT1) General Purpose Transistors PNP Silicon |
|
| 2 | LBC807-40LT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | LBC807-16LT1 |
Leshan Radio Company |
(LBC807-xxLT1) General Purpose Transistors PNP Silicon |
|
| 4 | LBC807-16LT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | LBC807-16LT3G |
Leshan Radio Company |
General Purpose Transistors |
|