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LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽNPN complement: LBC817 Series. ƽPb-Free Package is available. LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 3 1 2 DEVICE MARKING A.
to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR
–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 R θJA PD 300 2.4 R θJA T J , T stg 417
–55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit
LBC807_S-1/3
LESHAN RADIO COMPANY, LTD.
LBC807 Series
www.datasheet4u.com
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (I C .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LBC807-25LT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 2 | LBC807-25LT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | LBC807-25WT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | LBC807-25WT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | LBC807-16LT1 |
Leshan Radio Company |
(LBC807-xxLT1) General Purpose Transistors PNP Silicon |
|
| 6 | LBC807-16LT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 7 | LBC807-16LT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 8 | LBC807-16WT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 9 | LBC807-16WT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 10 | LBC807-40LT1 |
Leshan Radio Company |
(LBC807-xxLT1) General Purpose Transistors PNP Silicon |
|
| 11 | LBC807-40LT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 12 | LBC807-40LT3G |
Leshan Radio Company |
General Purpose Transistors |
|